| PART |
Description |
Maker |
| V59C1512804QBF37 |
64M X 8 DDR DRAM, 0.5 ns, PBGA60
|
PROMOS TECHNOLOGIES INC
|
| H5MS1G62MFP-L3M |
64M X 16 DDR DRAM, PBGA60
|
HYNIX SEMICONDUCTOR INC
|
| K4H560438E-ZLB30 K4H560838E-ZLB30 |
64M X 4 DDR DRAM, 0.7 ns, PBGA60 ROHS COMPLIANT, FBGA-60
32M X 8 DDR DRAM, 0.7 ns, PBGA60 ROHS COMPLIANT, FBGA-60
|
Samsung Semiconductor Co., Ltd.
|
| MT46V8M16BJ-75EITA MT46V8M16BJ-75ELITA MT46V8M16BJ |
8M X 16 DDR DRAM, 0.75 ns, PBGA60 16 X 9 MM, LEAD FREE, FBGA-60
32M X 4 DDR DRAM, 0.75 ns, PBGA60
|
Xicon Passive Components
|
| W947D2HBJX5I W947D2HBJX6E W947D2HBJX5E W947D2HBJX6 |
128Mb Mobile LPDDR
4M X 32 DDR DRAM, 5 ns, PBGA90
8M X 16 DDR DRAM, 5 ns, PBGA60
|
Winbond
WINBOND ELECTRONICS CORP
|
| M312L6523BTS-CAA M312L2923BTS-A2 M312L2923BTS-CAA |
64M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
64M X 72 DDR DRAM MODULE, 0.8 ns, DMA184
26615150 DDR SDRAM的注册模
DDR SDRAM Registered Module
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MT46V32M16P-5BC MT46V32M16BN-6C |
32M X 16 DDR DRAM, 0.7 ns, PDSO66 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66
32M X 16 DDR DRAM, 0.7 ns, PBGA60
|
Micron Technology, Inc.
|
| V59C1512404QCF-25 |
DDR DRAM, PBGA60
|
PROMOS TECHNOLOGIES INC
|
| HY5DU121622BT-D4 HY5DU12822BT HY5DU12822BTP-H HY5D |
32M X 16 DDR DRAM, 0.7 ns, PDSO66
DDR SDRAM - 512Mb
64M X 8 DDR DRAM, 0.7 ns, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
| HY5DU121622ALT-D4 HY5DU121622ALT-M HY5DU12422AT HY |
DDR SDRAM - 512Mb
64M X 8 DDR DRAM, 0.7 ns, PDSO66
32M X 16 DDR DRAM, 0.7 ns, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
| H5PS1G83EFR-E3L H5PS1G83EFR-S5I HYNIXSEMICONDUCTOR |
128M X 8 DDR DRAM, 0.6 ns, PBGA60
128M X 8 DDR DRAM, 0.4 ns, PBGA60
|
HYNIX SEMICONDUCTOR INC
|
| SALF5 |
32M X 8 DDR DRAM, 0.65 ns, PBGA60
|
PROMOS TECHNOLOGIES INC
|
|
